Fet the strain
Weber B Tan YH M Mahapatra S Watson TF Ryu H Lee S Rahman R Hollenberg LC L Klimeck G Simmons MY, 2015, 'Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, Mohiyaddin FA Rahman R Kalra R Lee S Klimeck G Hollenberg LC L Yang CH Rossi A Dzurak AS Morello A, 2015, 'Designing a large scale quantum computer with atomistic simulations', in 2014 Silicon Nanoelectronics Workshop, SNW 2014,
Ilatikhameneh H Novakovic B Tan Y Salmani-Jelodar M Kubis T Povolotskyi M Rahman R Klimeck G, 2015, 'Atomistic simulation of steep subthreshold slope Bi-layer MoS 2 transistors', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, Ilatikhameneh H Rahman R Appenzeller J Klimeck G, 2015, 'Electrically doped WTe 2 tunnel transistors', in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. Ilatikhameneh H Chen FW Rahman R Klimeck G, 2015, 'Electrically doped 2D material tunnel transistor', in 18th International Workshop on Computational Electronics, IWCE 2015, Īmeen TA Ilatikhameneh H Valencia D Rahman R Klimeck G, 2015, 'Engineering the optical transitions of self-assembled quantum dots', in 18th International Workshop on Computational Electronics, IWCE 2015, Ĭhen FW Ilatikhameneh H Klimeck G Rahman R Chu T Chen Z, 2015, 'Achieving a higher performance in bilayer graphene FET - Strain engineering', in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. Ilatikhameneh H Klimeck G Rahman R, 2015, '2D tunnel transistors for ultra-low power applications: Promises and challenges', in 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings, 914 - 914, presented at Progress in Electromagnetic Research Symposium (PIERS), Shanghai, PEOPLES R CHINA, 08 - 11 August 2016,
Huang JZ Long P Ilatikhameneh H Ameen T Rahman R Povolotskyi M Rodwell MJ W Klimeck G, 2016, 'Multiscale Transport Simulation of Nanoelectronic Devices with NEMO5', in 2016 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS), IEEE, Shanghai, PEOPLES R CHINA, pp. Long P Huang JZ Povolotskyi M Verreck D Klimeck G Rodwell MJ W, 2016, 'High-current InP-based triple heterojunction tunnel transistors', in 2016 Compound Semiconductor Week (CSW), 26 - 30 June 2016, Long P Povolotskyi M Huang JZ Ilatikhameneh H Ameen T Rahman R Kubis T Klimeck G Rodwell MJ W, 2016, 'Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors', in Device Research Conference - Conference Digest, DRC, įay P Li W Cao L Pourang K Islam SM Lund C Saima S Ilatikhameneh H Amin T Huang J Rahman R Jena D Keller S Klimeck G, 2016, 'Novel III-N heterostructure devices for low-power logic and more', in 16th International Conference on Nanotechnology - IEEE NANO 2016, pp.
85 - 88, Ĭhen F Ilatikhameneh H Tan Y Valencia D Klimeck G Rahman R, 2017, 'Transport in vertically stacked hetero-structures from 2D materials', in Journal of Physics: Conference Series, įay P Li W Digiovanni D Cao L Ilatikhameneh H Chen F Ameen T Rahman R Klimeck G Lund C Keller S Islam SM Chaney A Cho Y Jena D, 2017, 'III-N heterostructure devices for low-power logic', in China Semiconductor Technology International Conference 2017, CSTIC 2017,
Nishat MR K Tankasala A Kharche N Rahman R Ahmed SS, 2017, 'Multiscale-multiphysics modeling of nonpolar InGaN LEDs', in 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017, pp.